California based company, Crossbar, has shown itself to be advanced enough to demonstrate RRAM, a technology considered to be a leader in the race towards next generation memory. After some issues, the company is ready to push its non-volatile 3D Restive RAM (3D RRAM) on to the next phase of its development cycle. This 3D semiconductor structure will hold higher densities, and provide speedier access than NAND (a well-known type of flash memory).

According to Crossbar, its new technology is a simple, RRAM-based memory module that can scale up to 1 terabyte on a chip the size of a postage stamp. RRAM uses 20 times less power to store a bit of data, can access that data 20 times faster than today’s best flash memory, and has a latency 100 times lower than flash memory.

Crossbar recently faced a major technological issue with error-causing electron leaks between memory cells. This issue was limiting the readability of RRAM, but luckily the company found a way to fix it. George Minassian, CEO of Crossbar said in a statement, “Crossbar continues to overcome the major technical hurdles that have, in the past, kept others from bringing RRAM to market”. With that out of the way, the memory is ready to move out of the prototype phase and on to a fabrication facility.

The company hopes to see RRAM technology in commercial products, and aims to make some of their 3D Restive RAM products available by the year 2016. Other sources say the technology is still a long way from production (The Register). Still, RRAM is expected to feature as memory in a variety of wearables, smartphones, and high-density storage devices, enabling a new possibilities for connected devices.